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Gettering and Defect Engineering in Semiconductor Technology XII

ISBN / ISBN-13: 3-908451-43-4 / 978-3-908451-43-3
Year: 2008
Title: Gettering and Defect Engineering in Semiconductor Technology XII   [online]
Subtitle: GADEST 2007
Authors/Editors: A. Cavallini, H. Richter, M. Kittler and S. Pizzini
Published in: Solid State Phenomena, Volumes 131 - 133
Category: Selected, peer reviewed papers from Gettering and Defect Engineering in Semiconductor Technology - GADEST 2007" held from 14th to 19th October 2007 in Italy at the EMFCSC
Pages: 648
Edition: softcover
Description: This collection comprises 117 peerreviewed papers invited from over 70 research institutions in more than 25 countries. These papers, written by internationally recognized experts in the field, review the current state-of-the-art and predict future trends in their respective authors’ fields of research. Fundamental aspects, as well as technological problems associated with defects in electronic materials and devices, are addressed
The collection is divided into the chapters: Crystalline silicon for solar cells: single crystals, multi-crystalline Si, ribbons, Si thin films on substrates; Silicon-based materials and advanced semiconductor materials (strained Si, SOI, SiGe, SiC, Ge); Impurities (oxygen, carbon, nitrogen, fluorine, metals) in Si; Modeling/simulation of defects in Si/semiconductors; Defect engineering in microelectronics and photovoltaics; Gettering and passivation techniques; Defect and impurity characterization (physical and electrical); Si-based Nanostructures (nanocrystals, nanowires, nanodevices); Silicon-based heterostructures and optoelectronics.
Essential reading for those wanting to keep up with the field.
TOC: Table of Contents
Prices: USD: 367.00 / EUR: 266.00

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(ISBN: 978-3-908451-43-3)
(ISBN: 978-3-908454-27-4)