The Size Distribution of Defect Clusters in n-Si (FZ, Cz), Irradiated by Fast Neutrons
A.P. Dolgolenko, G.P. Gaidar |
p1 |
|
Role of Diffusion in the Shaping of the High-Absorption State in a Resonatorless Exciton Bistable System
Yuriy V. Gudyma, Ivanna V. Kruglenko |
p9 |
|
On the Interaction of Dislocations with Impurities in Silicon
Daniela Cavalcoli, Anna Cavallini |
p15 |
|
Oxygen Enrichment of Silicon Wafer by Ion Implantation Method and Fabrication of Surface Barrier Detectors
S.K. Chaudhuri, P.V. Rajesh, S.S. Ghugre, D. Das |
p23 |
|
DFT Analysis of the Indium-Antimony-Vacancy Cluster in Silicon
M.M. De Souza, Jonathan P. Goss |
p29 |
|
Growth and Characterization of Boron-Doped Si1-x-yGexCy Layers Grown by Reduced Pressure Chemical Vapor Deposition
H.H. Radamson, J. Hållstedt |
p39 |
|
Identification of the Nature of Deep Trap States in Molecular Beam Epitaxially Grown Gallium Arsenide
N.C. Halder |
p51 |
