Papers of Title

Gettering and Defect Engineering in Semiconductor Technology XI

Table of Contents (127 papers, 10 per page listed)

Evolution of Quantum Electronic Features with the Size of Silicon Nanoparticles Embedded in a SiO2 Layer Obtained by Low Energy Ion Implantation   Jeremie Grisolia, M. Shalchian, G. Benassayag, H. Coffin, C. Bonafos, C. Dumas, S.M. Atarodi, A. Claverie	p71
Carrier Accumulation in Silicon-On-Insulator Structures Containing Ge Nanocrystals in the Burried SiO2 Layer   Ida E. Tyschenko, A.A. Frantsuzov, O.V. Naumova, B.I. Fomin, D.V. Nikolaev, V.P. Popov	p77
Ge Nanoclusters in GeO2: Synthesis and Optical Properties   Vladimir A. Volodin, E.B. Gorokhov, D.V. Marin, A.G. Cherkov, Anton K. Gutakovskii, M.D. Efremov	p83
µ-Raman Investigations on Hydrogen Gettering in Hydrogen Implanted and Hydrogen Plasma Treated Czochralski Silicon   Wolfgang Düngen, Reinhart Job, Yue Ma, Yue Long Huang, Wolfgang R. Fahrner, L.O. Keller, J.T. Horstmann	p91
Morphological Transformation of Oxide Particles and Thresholds for Effective Gettering in Silicon   Robert J. Falster, Vladimir V. Voronkov, V.Y. Resnick, M.G. Mil'vidskii	p97
Effect of Oxygen Precipitates on the Surface-Precipitation of Nickel on Cz-Silicon Wafers   Kozo Nakamura, Junsuke Tomioka	p103
Electrical Properties of Clustered and Precipitated Iron in Silicon   R. Khalil, Vitaly V. Kveder, Wolfgang Schröter, Michael Seibt	p109
Gettering Mechanism of Cu in Silicon Calculated from First Principles   Kazuhito Matsukawa, Nobusuke Hattori, Shigeto Maegawa, Koun Shirai, Hiroshi Katayama-Yoshida	p115
Energetics and Kinetics of Defects and Impurities in Silicon from Atomistic Calculations   Wolfgang Windl	p125
Microscopic Mechanisms of Cobalt Disilicide Nucleation in Silicon   V.A. Borodin, M.O. Ruault, Mariya G. Ganchenkova, F. Fortuna	p133