Occurrence of Arsenic-Based Defects and Techniques for Their Elimination
Felicia Goh, Christopher Lim, Vincent Sih, Zainab Ismail, Simon Y.M. Chooi
|
p87 |
Selective Wet Removal of Hf-Based Layers and Post-Dry Etch Residues in High-k and Metal Gate Stacks
M. Claes, Vasile Paraschiv, S. Beckx, M. Demand, W. Deweerd, Sylvain Garaud, H. Kraus, Rita Vos, James Snow, Werner Boullart, Stefan De Gendt
|
p93 |
HF Based Solutions for HfO2 Removal; Effect of pH and Temperature on HfO2: SiO2 Etch Selectivity
Vasile Paraschiv, M. Claes, Mikhail R. Baklanov, Werner Boullart, Stefan De Gendt, Serge Vanhaelemeersch
|
p97 |
Selective Si3N4 Etch in Single Wafer Application
D. Martin Knotter, Nigel Stewart, Ian Sharp
|
p103 |
Etch Rate Depth Profiling by Single Wafer Etching Equipment
Enrico Bellandi, Alice C. Elbaz, Rosella Piagge, Francesco Pipia, Mauro Alessandri
|
p107 |
Novel Chemical Etching to Correct Film Thickness Distributions
Hajime Ugajin, Hayato Iwamoto, Kei Kinoshita
|
p111 |
Etching of Silicon Oxide Films in Supercritical Carbon Dioxide
Koichiro Saga, Hitoshi Kuniyasu, Takeshi Hattori, Kenji Yamada, Tomoyuki Azuma
|
p115 |
Challenges of Finer Particle Detection on Bulk-Silicon and SOI Wafers
Takeshi Hattori, Akira Okamoto, Hitoshi Kuniyasu
|
p121 |
The Impact of Backside Particles on the Limits of Optical Lithography
Twan Bearda, Paul W. Mertens, Frank Holsteyns, Peter De Bisschop, René Compen, Aschwin van Meer, Marc M. Heyns
|
p129 |
Inspection Challenges at the 45nm Technology Node
David Shortt, Lisa Cheung
|
p133 |