The Characterization of Defects in Silicon Carbide Crystals by X-Ray Topography in the Back-Reflection Geometry
William M. Vetter |
p1 |
|
Progress in Wide Bandgap Ferromagnetic Semiconductors and Semiconducting Oxides
S.J. Pearton, C.R. Abernathy, G.T. Thaler, R.M. Frazier, Y.H. Heo, M. Ivill, D.P. Norton, Yong Duk Park |
p17 |
|
Calculating the Properties of Defects in Semiconductors at Finite Temperatures
Stefan K. Estreicher, Mahdi Sanati |
p47 |
|
Role of Cation Vacancy-Related Defects in Self-Assembling of CdSe Quantum Dots
L.V. Borkovska, R. Beyer, M. Hoffmann, A. Holzhey, N. Korsunska, Yu.G. Sadofyev, Joerg Weber |
p55 |
|
Radiation-Induced Defect Formation in Ternary Ge-As-S Vitreous Semiconductors
R.Ya. Golovchak, Oleg I. Shpotyuk |
p67 |
|
First Principles Calculations of Hydrogen Aggregation in Silicon
N. Martsinovich, A.L. Rosa, M.I. Heggie, Patrick R. Briddon |
p81 |
|
Anisotropy of Strain Relaxation in III-V Semiconductor Heterostructures
O. Yastrubchak, T. Wosiński, J.Z. Domagała, E. Łusakowska |
p93 |
|
On the Photo-Ionization Cross-Section of DX Centers
Ewa Płaczek-Popko |
p101 |
|
Imaging and Characterizing Nanoscale Fluctuations in the Distribution of Dopant Atoms by Scanning Tunneling Microscopy
Ph. Ebert |
p111 |
|
Investigation and Identification of Transition
Metals in p-Type Boron-Doped Silicon
by Non-Invasive Techniques
Olivier Palais, P. Hidalgo |
p125 |
