| ISBN / ISBN-13: | 3-908451-04-3 / 978-3-908451-04-4 |
|---|---|
| Year: | 2004 |
| Title: | Defects and Diffusion in Semiconductors - An Annual Retrospective VII [online] |
| Authors/Editors: | David J. Fisher |
| Published in: | Defect and Diffusion Forum, Volumes 230 - 232 |
| Category: | |
| Pages: | 540 |
| Edition: | softcover |
| Description: | This seventh volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective VI (Volumes 221-223) and the end of September 2004 (allowing for vagaries of journal availability). In addition to the abstracts, the issue includes invited original papers on the topics of “The Characterization of Defects in Silicon Carbide Crystals by X-Ray Topography in the Back-Reflection Geometry” (W.M.Vetter), “Progress in Wide Band-Gap Ferromagnetic Semiconductors and Semiconducting Oxides” (S.J.Pearton et al.), “Calculating the Properties of Defects in Semiconductors at Finite Temperatures” (S.K.Estreicher & M.Sanati), “The Role of Cation Vacancy-Related Defects in Self-Assembling of CdSe Quantum Dots” (L.V.Borkovska, R.Beyer, et al.), “Radiation-Induced Defect Formation in Ternary Ge-As-S Vitreous Semiconductors” (R.Y.Golovchak & O.I.Shpotyuk), “First-Principles Calculations of Hydrogen Aggregation in Silicon” (P.R.Briddon et al.), “Anisotropy of Strain Relaxation in III-V Semiconductor Heterostructures” (O.Yastrubchak, T.Wosinski et al.), “On the Photo-Ionization Cross-Section of DX Centers” (E.Placzek-Popko), “Imaging and Characterizing Nanoscale Fluctuations in the Distribution of Dopant Atoms by Scanning Tunneling Microscopy” (P.Ebert), “Investigation and Identification of Transition Metals in p-Type Boron-Doped Silicon by Non-Invasive Techniques” (O.Palais & P.Hidalgo), “Classification of Defects on Semiconductor Wafers using Priority Rules” (N.G.Shankar et al.), “Grown-In Lattice Defects and Diffusion in Czochralski-Grown Germanium” (J.Vanhellemont, O.De Gryse et al.), “Mechanism of Formation and Physical Classification of the Grown-In Micro-Defects in Semiconductor Silicon” (V.I.Talanin & I.E.Talanin), “Nitrogen in Silicon” (D.Yang & X.Yu), “Modelling of Staebler-Wronski Effect in Hydrogenated Amorphous Silicon under Moderate and Intense Illumination” (A.F.Meftah et al.) and “Defect Engineering in Impurity-Free Disordered AlGaAs for Opto-Electronic Device Application” (P.N.K.Deenapanray). These 16 invited papers and 763 selected abstracts together provide an up-to-date insight into current and future trends in semiconductor theory, processing and applications as related to diffusional phenomena and defect behavior. |
| TOC: | Table of Contents |
| Prices: | USD: 370.00 / EUR: 268.00 |
