Stable Hydrogen Pair Trapped at Carbon Impurities in Silicon
V.P. Markevich, B. Hourahine, R.C. Newman, R. Jones, Mats Kleverman, J. Lennart Lindström, L.I. Murin, Masashi Suezawa, Sven Öberg, Patrick R. Briddon |
p1 |
|
New Approach to Capacitance Studies of 'DX' Centers
L. Dózsa |
p11 |
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Diodes Fabricated by Electron Beam Doping (Superdiffusion)Technique in Semiconductors at Room Temperature
Takao Wada, Hiroshi Fujimoto |
p23 |
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Modeling of Dopant and Defect Interactions in Si Process Simulators
Lourdes Pelaz, Luis Alberto Marqués, María Aboy, Juan Barbolla |
p31 |
|
Spectroscopic Study of Magnesium-Related Impurities in Silicon
L.T. Ho |
p41 |
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Makyoh Topography: A Simple Yet Powerful Optical Method for Surface Flatness and Defect Characterisation
Ferenc Riesz |
p51 |
|
Electron Diffraction of 3-D Defects in Nanostructural II-VI Semiconductors
M. Kuzma |
p63 |
|
A Finite Difference Calculation of Impurity Migration in Semiconductors by the Kick-Out Mechanism
A. Benmakhlouf |
p89 |
|
In-Diffusion Concentration Profiles of Dopants in Semiconductors
E. Antoncik |
p109 |
|
Recent Advances in the Measurement of Interstitial Oxygen in Silicon by Infra-Red Spectroscopy
B. Pivac, A. Sassella, A. Borghesi |
p123 |
