Optimized Parameters for Modeling Oxygen Nucleation in Silicon
Markus Zschorsch, Robert Hölzl, Herbert Rüfer, Hans Joachim Möller, Wilfried von Ammon |
p71 |
|
Oxygen Ion Bombardment for Local Oxide Formation in Si
D. Krüger, R. Kurps, Peter Formanek, G. Weidner |
p77 |
|
Nitrogen Diffusion and Interaction with Oxygen in Si
Vladimir V. Voronkov, Robert J. Falster |
p83 |
|
Structure and Electronic Properties of Nitrogen Defects in Silicon
R. Jones, I. Hahn, Jonathan P. Goss, Patrick R. Briddon, Sven Öberg |
p93 |
|
Characterization of Nucleation Sites in Nitrogen Doped Czochralski Silicon by Density Functional Theory and Molecular Mechanics
F. Sahtout Karoui, A. Karoui, George A. Rozgonyi, M. Hourai, Koji Sueoka |
p99 |
|
Processing and Characterization of 300 mm Argon-Annealed Wafers
Timo Müller, E. Daub, H. Yokota, R. Wahlich, P. Krottenthaler, Wilfried von Ammon |
p105 |
|
Thermal Stability of Oxygen Precipitates in Nitrogen-Doped Czochralski Silicon
De Ren Yang, Hong Jie Wang, Xuegong Yu, Xiang Yang Ma, Duan Lin Que |
p111 |
|
Nitrogen Out-Diffusion from Czochralski Silicon Monitored by Depth Profiles of Shallow Thermal Donors
Vladimir V. Voronkov, A.V. Batunina, G.I. Voronkova, Robert J. Falster |
p117 |
|
Vibrational Lifetimes of Hydrogen and Silicon MOSFET Reliability
Leonard C. Feldman, G. Lüpke, N.H. Tolk |
p123 |
|
Influence of Hydrogen on the Formation of Interstitial Agglomerates in Silicon
T. Mchedlidze, Masashi Suezawa |
p129 |
