Metastablility of Interstitial Clusters in Ion-Damaged Silicon Studied by Isothermal Capacitance Transient Spectroscopy
P.K. Giri |
p1 |
|
Optimization of Off-Oriented Ge Substrates for MOVPE-Grown GaAs Solar Cells
M.K. Hudait, S.B. Krupanidhi |
p15 |
|
On the Role of Bulk Recombination of Intrinsic Point Defects in Si and their Interaction with the Surface in the Course of {113} Defect Growth: a Kinetic Study by in situ HVEM Irradiation
Liudmila I. Fedina |
p21 |
|
Cavity Formation in Helium-Implanted Silicon - Temperature Dependence
Jean François Barbot, Erwan Oliviero, Marie-Laure David, Sophie Rousselet, Marie France Beaufort, A. van Veen |
p37 |
|
Shear Moduli of Silicon and Germanium in Semiconducting and Metallic Phases
Leonid Burakovsky, Dean L. Preston |
p43 |
|
Tracer Diffusion in the Concentrated Lattice Gas with Self-Excitation
Irina V. Belova, Graeme E. Murch |
p55 |
|
Defect Luminescence in Some Layered Binary Chalcogenide Semiconductors
A. Aydinli, N.M. Gasanly |
p61 |
|
Teh Effect of Boron Concentration upon Defect Formation after Laser Thermal Processing using Molecular Dynamics
L. Wang, C.S. Murthy, P. Clancy |
p71 |
|
Defect States in InAs Quantum Dots Characterized by Photo-Induced Current Transient Spectroscopy
Hoon Young Cho |
p81 |
|
Redistribution of Point Defects in the Crystalline Lattice of a Semiconductor in an Inhomogeneous Temperature Field
Arthur Medvid |
p89 |
