Monte Carlo Theoretical Study of Defect Generation at Heterovalent ZnSe/GaAs Epitaxial Interfaces
Takashi Nakayama
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p103 |
A Simple Method for Determining the Bascie Diffusion Parameters of Dopants using an Analytical Form of the Concentration Profile
E. Antoncik
|
p113 |
An Exact Formula for the Effective Diffusion Coefficient of Dopants in Semiconductors
E. Antoncik
|
p123 |