Thick GaN Films Grown on Sapphire: Defects in Highly Mismatched Systems
T. Paskova, E. Valcheva, Bo Monemar
|
p1 |
Novel Defect-Related Properties of Silicon
S.M. Prokes, R.C. Cammarata
|
p29 |
The Search for Tunnelling States in Bulk Silicon Disordered by Fast Neutron Irradiation
Michèle Coeck, Christiane Laermans
|
p47 |
Residual Shallow Donor- and Acceptor-Impurities in SSD- and LEC-Grown High-Purity InP Crystals
E. Kubota, S. Yamada, Kotoji Ando
|
p67 |
Dislocations in Semiconductors: Core Structure and Mobility
João F. Justo
|
p97 |
Analysis of Radiation-Induced Defects in InGaP Materials and Solar Cells
Aurangzeb Khan
|
p107 |
A Perspective from Crystal Growth and Wafer Processing on the Properties of Intrinsic Point Defects in Silicon
Robert J. Falster, Vladimir V. Voronkov
|
p125 |
Copper Complexes in Silicon Crystals
Minoru Nakamura
|
p135 |
The Effect of Implant Temperature and Pre-Annealing on Defect Formation after Laser Thermal Processing
H.B. Banisaukas, Kevin S. Jones, S. Talwar, D.C. Jacobson
|
p145 |
X-Ray Topographic Analysis of Misfit Dislocation Distribution in InGaAs and GeSi/Si Partially Relaxed Heterostructures
C. Ferrari
|
p153 |