Materials Quality and Materials Cost - Are they on a Collision Course?
K.V. Ravi |
p103 |
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Defect Engineering in the Development of Advanced Silicon Crystals and Wafers
Jan Vanhellemont |
p111 |
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200 GHz Potential of Si-Based Devices
Uwe König |
p121 |
|
Silicon Materials Engineering for the Next Millennium
Lionel C. Kimerling |
p131 |
|
Electrical Characterization of As-Grown and Thermally Treated 8'' Silicon Wafers
Antonio Castaldini, Daniela Cavalcoli, Anna Cavallini, Sergio Pizzini, E. Susi |
p143 |
|
Equilibrium Critical Thickness of Strained Buried SiGe Layers
A. Fischer, G. Kissinger, Hans Richter, P. Zaumseil |
p149 |
|
Improved Microwave Absorption Technique for Bulk and Surface Lifetime Analysis in Processed Si Wafers
Eugenijus Gaubas, Eddy Simoen, C. Claeys, A. Poyai |
p155 |
|
Defect Control in Nitrogen Doped Czochralski Silicon Crystals
Atsushi Ikari, Katsuhiko Nakai, Y. Tachikawa, H. Deai, Y. Hideki, Yasumitsu Ohta, Naoya Masahashi, S. Hayashi, T. Hoshino, Wataru Ohashi |
p161 |
|
Growth and Characteristics of Low Trap Density Ultrathin [4-7 nm] Gate Oxides for SiGe Quantum Well MOS Structures
S. Kar, P. Zaumseil |
p167 |
|
Interaction of Crystal Defects with p-n Junctions in Multicrystalline Si Solar Cells
O. Krüger, Martin Kittler, C. Häßler, Wolfgang Koch |
p173 |
