Intrinsic Point Defects and Grown-in Defects in Silicon
Takahisa Okino |
p1 |
|
Point Defect Assisted Diffusion in Semiconductors
Jaroslaw Dąbrowski |
p23 |
|
Diffusion and Electrical Properties of 3d Transition-Metal Impurities in Silicon
H. Kitagawa |
p51 |
|
Metastable Defects in Compound Semiconductors
J.C. Bourgoin |
p73 |
|
Electronic Structure and Hyperfine Structure of Deep Donors in Si and in Some Compound Semiconductors
Harald Overhof |
p93 |
|
Role of Oxygen in Metal Silicide Formation and Properties
S.P. Murarka |
p119 |
|
The Effects of Implanted Arsenic on Ti-Silicide Formation
M. Milosavljević, N. Bibić, D. Peruško, C. Jeynes, U. Bangert |
p147 |
|
The Interaction of Hydrogen with Deep Level Defects in Silicon
R. Jones, B.J. Coomer, Jon P. Goss, B. Hourahine, A. Resende |
p173 |
|
Role of Metal Impurity 'Bi' in Amorphous Chalcogenide Semiconductors
C. Vautier |
p249 |
