EBIC Characterization of Oxygen Precipitation and Denuded Zone in Intrinsically Gettered P-Type Czochralski Silicon
S. Spiga, Antonio Castaldini, Anna Cavallini, Maria Luisa Polignano, F. Cazzaniga |
p97 |
|
Impact of Phosphorus Diffusion on the Contamination Level of Dislocations in Deformed Float Zone Silicon as Studied by Beam Injection Techniques
K. Knobloch, Martin Kittler, Winfried Seifert, J.J. Simon, Isabelle Périchaud |
p105 |
|
LBIC Investigations of the Lifetime Degradation by Extended Defects in Multicrystalline Solar Silicon
Markus Rinio, Hans Joachim Möller, Martina Werner |
p115 |
|
Determination of the Surface Recombination Velocity and of Its Evolution in Monocrystalline Silicon by the Light Beam Induced Current Technique in Planar Configuration
S. Spadoni, Maurizio Acciarri, G. Barbi, Sergio Pizzini |
p123 |
|
SEM-EBIC Study of Defects in Epitaxial AlGaN Layers
G.N. Panin, O.V. Kononenko, V.N. Matveev, Eugene B. Yakimov, Oliver Ambacher |
p131 |
|
Minority Carrier Diffusion Length in AlGaN: A Combined Electron Beam Induced Current and Transmission Microscopy Study
A. Cremades, M. Albrecht, Axel Voigt, J. Krinke, R. Dimitrov, Oliver Ambacher, M. Stutzmann |
p139 |
|
Ion Beam Induced Luminescence
K.G. Malmqvist |
p147 |
|
Nanocharacterization of Semiconductors by Scanning Photoluminescence Microscopy
P. Fischer, J. Christen, M. Zacharias, H. Nakashima, K. Hiramatsu |
p151 |
|
Cathodoluminescence Microscopy of Semiconductor Devices Using a Novel Detector with High Collection and Backscattered Electron Rejection Efficiency
Jacob C.H. Phang, Daniel S.H. Chan, W.K. Chim, Yan Yi Liu, X. Liu |
p159 |
|
Cathodoluminescence Study on ZnO and GaN
Takashi Sekiguchi, Naoki Ohashi, Hisanori Yamane |
p171 |
