| ISBN / ISBN-13: | 3-908450-32-2 / 978-3-908450-32-0 |
|---|---|
| Year: | 1998 |
| Title: | Diffusion in GaAs and other III-V Semiconductors [online] |
| Subtitle: | 10 Years of Research |
| Authors/Editors: | D.J. Fisher |
| Published in: |
Defect and Diffusion Forum, Volumes 157 - 159
|
| Category: | |
| Pages: | 520 |
| Edition: | softcover |
| Description: | The inherently superior electron ballistic properties of GaAs, as compared with those of Si, have generated an ever-increasing pace of research on this semiconductor; thus making this volume a timely source of information. Knowledge of relevant diffusion data is essential to the control of purity during preparation, to the planning of doping processes and to the estimation of component lifetimes; and this book collects and correlates known diffusion data for this material and for the other III-V analogues. Another advantage of GaAs is the ability to 'tailor' band-gaps etc., by alloying with other members of the III-V family. Therefore, diffusion information on all such alloys is also included here in a succinct and easily accessed manner. The behaviour of epitaxial layers of the compounds and their alloys is also an intriguing feature of these semiconductors; and is relevant not only to straightforward interdiffusion kinetics studies but also to the preparation of exciting quantum-well devices. Here too, all available data are compiled in this book and the numerous layered systems for which diffusion data are available are listed here for easy reference. In addition, the data section is complemented by extensive invited papers, contributed by leading experts in the field of III-V system study. |
| TOC: | Table of Contents |
| Prices: | USD: 368.00 / EUR: 267.00 |
