Design: New Material Challenge for Silicon ULSI
Lionel C. Kimerling |
p1 |
|
Silicon Wafer Technology: The Challenges towards the Gigabit Era
A.P. Mozer |
p9 |
|
Hydrogen Annealed Silicon Wafer
S. Nadahara, H. Kubota, S. Samata |
p19 |
|
Formation of Microscopic Distribution of Grown-In Defects in Czochralski Silicon Crystal
R. Habu, Kazuto Kawakami, Mitsuhiro Hasebe |
p27 |
|
CZ Crystal Growth Development in Super Silicon Crystal Project
H. Yamagishi, M. Kuramoto, Y. Shiraishi, M. Machida, K. Takano, N. Takase, T. Iida, J. Matsubara, Kazuya Takada |
p37 |
|
Gettering by Voids in Silicon: A Comparison with other Techniques
Vito Raineri |
p43 |
|
Gettering in Advanced Low Temperature Processes
S. Sadamitsu, S. Ogushi, Y. Koike, N. Reilly, T. Nagashima, Mizuka Sano, H. Tsuya |
p53 |
|
Metal Gettering by Defective Regions in Carbon-Implanted Silicon
Reinhard Kögler, J.R. Kaschny, R.A. Yankov, P. Werner, A.B. Danilin, Wolfgang Skorupa |
p63 |
|
Metallic Impurity Gettering in MeV Implanted Si
O.V. Kononchuk, R.A. Brown, Sergei V. Koveshnikov, K.L. Beaman, F. Gonzalez, George A. Rozgonyi |
p69 |
|
Influence of Size and Density of Oxygen Precipitates of Internal Gettering Efficiency of Iron in Czochralski-Grown Silicon
H. Takahashi, Hiroshi Yamada Kaneta, Masashi Suezawa |
p75 |
