A Quantitative Method of Metal Impurities Depth Profiling for Gettering Evaluation in Silicon Wafers
Mohammad B. Shabani, T. Yoshimi, S. Okuuchi, A. Kaniava |
p81 |
|
Oxygen Gettering on Buried Layers at Post-Implantation Annealing of Hydrogen Implanted Czochralski Silicon
Reinhart Job, Wolfgang R. Fahrner, Alexander G. Ulyashin, Yu.A. Bumay, A.I. Ivanov, L. Palmetshofer |
p91 |
|
Use of Gettering and Defect Induced Processes in Ultra-Thin Buried Oxide Synthesis
V.G. Litovchenko, A.A. Efremov, B.N. Romanyuk, V.P. Melnik, C. Claeys |
p97 |
|
Interaction of Impurities and Dislocations in Silicon before and after External Gettering
Isabelle Périchaud, Santo Martinuzzi |
p103 |
|
The Influence of Intrinsic Point Defects on Getter Formation in Silicon Wafers
M.G. Mil'vidskii, Vladimir V. Voronkov, K.L. Enisherlova, V.Ja. Reznick |
p109 |
|
Comparison of External Gettering Efficiency of Phosphorus Diffusion, Aluminium-Silicon Alloying and Helium Implantation in Silicon Wafers
N. Gay, Santo Martinuzzi |
p115 |
|
Effect of High Temperature Pre-Anneal on Oxygen Precipitates Nucleation Kinetics in Si
Robert J. Falster, M. Cornara, D. Gambaro, M. Olmo, M. Pagani |
p123 |
|
Vacancy-Assisted Oxygen Precipitation Phenomena in Si
Robert J. Falster, M. Pagani, D. Gambaro, M. Cornara, M. Olmo, G. Ferrero, P. Pichler, M. Jacob |
p129 |
|
Mechanism of Slip Dislocation Generation by Oxide Precipitates in Czochralski Silicon Wafers
Koji Sueoka, M. Akatsuka, H. Katahama, N. Adachi |
p137 |
|
State of Oxygen and Growth Conditions
T.M. Tkacheva, G.N. Petrov |
p143 |
