| ISBN / ISBN-13: | 3-908450-27-6 / 978-3-908450-27-6 |
|---|---|
| Year: | 1997 |
| Title: | Gettering and Defect Engineering in Semiconductor Technology VII [online] |
| Subtitle: | GADEST 1997 |
| Authors/Editors: | C. Claeys, J. Vanhellemont, H. Richter and M. Kittler |
| Published in: | Solid State Phenomena, Volumes 57 - 58 |
| Category: | Proceedings of the 7th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST '97), Spa, Belgium, October 1997 |
| Pages: | 556 |
| Edition: | softcover |
| Description: | Defect control relies more and more upon advanced fabrication approaches such as the use of slow pulling rates and hydrogen annealing. Gettering techniques remain of key importance in enhancing the device yield. This volume provides the most up-to-date information for scientists and engineers who are involved in the fields of semiconductor defect physics or materials science. Fundamental aspects, as well as technological problems, which are associated with defects in electronic materials and devices, are addressed. Due to the broad spectrum of topics covered, ranging from theoretical analyses to practical engineering solutions, the present book uniquely and complements others in the field. 1. Keynote Address. 2. Silicon Materials. 3. Gettering Techniques. 4. Oxygen in Silicon. 5. Erbium in Silicon. 6. Radiation Effects in Semiconductors. 7. Dislocations in Silicon. 8. Defect Engineering. 9. Advanced Semiconductor Materials and Devices. 10. Semiconductor Material and Device Diagnostics. |
| TOC: | Table of Contents |
| Prices: | USD: 270.00 / EUR: 196.00 |
