Epitaxial Growth and Characterization of Nitride Semiconductors
A. Yoshida |
p1 |
|
Crystalline Bi2Se3 Thin Films: Growth and Properties
L.P. Deshmukh, D.S. Sutrave, K.M. Garadkar, G.S. Shahane, R.N. Mulik |
p7 |
|
Growth of High Purity GaAs Layers by Vapour Phase Epitaxy
K. Chand, R.K. Purohit |
p10 |
|
Amorphous Chalcogenide Semiconductors: The Role of Bismuth Addition
C. Vautier |
p14 |
|
Suppression of Auger Recombination by Strain in Sb Based mid-IR Lasers
B. Grietens, S.C. Jain, C. Van Hoof, S. Németh, P. Van Daele, G. Borghs |
p20 |
|
Study of Gate Length, Channel Length and Gate-Source Spacing on the GaAs MESFET Characteristics
Nandita Dasgupta, Srinivasa Murthy G.B |
p26 |
|
Physical Principles of New Devices Related to Giant Electric Field Effect in MDS Structure
M. Levin, V. Sandomirsky, I. Schlimak |
p29 |
|
Raman Spectroscopic Investigation of ZnO and Doped ZnO Films, Nanoparticles and Bulk Material at Ambient and High Pressures
S.K. Sharma, G.J. Exarhos |
p32 |
|
Microprocessing of Electronic Materials Using Short Wavelength Lasers
K. Sugioka, K. Toyoda |
p38 |
|
Band Gap Measurement of the Sintered Cdx Se1-x Films from Reflectance Measurement
S.K. Sharma, Vijay Kumar, S.K. Kaushish, T.P. Sharma |
p40 |
