Annihilation of Self-Interstitials by Dislocations in Silicon as Studied by Gold Diffusion
G. Mariani, Bernard Pichaud, Eugene B. Yakimov |
p3 |
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Formation of Electrical Activity of Dislocations in Si during Plastic Deformation
O.V. Kononchuk, V. Orlov, Olga V. Feklisova, Eugene B. Yakimov |
p15 |
|
Electronic and Electrical Properties of Polycrystalline Silicon: Effects of Grain Boundary Segregation
Y. Fujita, K. Kitakizaki, Kinichi Masuda-Jindo |
p21 |
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Atomic Simulation Study of Gettering and Passivation in Polycrystalline Semiconductors
Kinichi Masuda-Jindo, Y. Fujita |
p27 |
|
The Switching Effects at Grain Boundaries Spontaneously Nucleating at the Crystallization Front of Shaped Silicon
A.K. Fedotov, A. Drozdovski, S. Shumski |
p33 |
|
Microcharacterization of Polycrystalline Semiconductors by Scanning Electron Microscopy in Electron Beam Induced Current Mode
Eugene B. Yakimov |
p39 |
|
Beam Injection Methods as Tools for Studying Extended Defects in Semiconductors: Characteristics and Capabilities
Antonio Castaldini, Anna Cavallini |
p51 |
|
Scanning Deep Level Transient Spectroscopy Measurements of Extended Defects in Silicon
K. Knobloch, Martin Kittler, Winfried Seifert, V. Higgs |
p63 |
|
Lifetime and Material Characteristics of Multicrystalline Silicon Measured with High Spatial Resolution
Stephan W. Glunz, C. Hebling, W. Warta |
p69 |
|
On the Electrical Activity of Fe-Contaminated Silicon Bicrystals
A. Ihlal, Richard Rizk |
p75 |
