Room Temperature UHV Silicon Direct Bonding
F. Shi, G. Elssner, Manfred Reiche, U.M. Gösele
|
p143 |
External Gettering for Multicrystalline Silicon Wafers
Santo Martinuzzi, Isabelle Périchaud
|
p153 |
Gettering of Transition Metals in Multicrystalline Silicon for Photovoltaic Applications
Eicke R. Weber, Scott A. McHugo, H. Hieslmair
|
p165 |
Gettering of Au in Heat Treated Si/SiGe/Si Structures
K. Schmalz, D. Krüger, R. Kurps, T. Morgenstern, H.P. Zeindl
|
p171 |
Gettering of Low Concentration Copper, Nickel and Iron Contamination in Czochralski Silicon Wafers
Z. Laczik, L. Bouwhuis, G.R. Booker, Robert J. Falster
|
p177 |
Defect Engineering for Silicon-on-Insulator, MeV Implantation and Low Temperature Processing
Sergei V. Koveshnikov, Anant K. Agarwal, K.L. Beaman, George A. Rozgonyi
|
p183 |
Interactions between Dopants and End-of-Range Defects in Silicon
A. Claverie, C. Bonafos, A. Martinez, Daniel Alquier
|
p195 |
Behaviour of the Size Distribution Function of End-of-Range Dislocation Loops during Silicon Oxidation
Michael Seibt, E. Spiecker
|
p205 |
SiC Buried Layer Formation Induced by Ion Implantation
N.I. Klyui, D. Krüger, B.N. Romanyuk, V.G. Litovchenko, Hans Richter
|
p211 |
The Mechanisms and Application of Dislocation Related Radiation for Silicon Based Light Sources
E.A. Steinman, Vitaly V. Kveder, Hermann G. Grimmeiss
|
p217 |