| ISBN / ISBN-13: | 3-908450-11-x / 978-3-908450-11-5 |
|---|---|
| Year: | 1995 |
| Title: | Gettering and Defect Engineering in Semiconductor Technology VI [online] |
| Subtitle: | GADEST 1995 |
| Authors/Editors: | H. Richter, M. Kittler and C. Claeys |
| Published in: | Solid State Phenomena, Volumes 47 - 48 |
| Category: | Proceedings of the 6th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST '95) held in Berlin, Germany, September 1995 |
| Pages: | 640 |
| Edition: | softcover |
| Description: | At the present time, Si-based technology is undergoing a transition to the next generation of substrates, having a diameter of 300 mm. The fundamental physical limits are being approached in terms of miniaturization, increased chip area, faster switching speeds, and diversity of operations. This raises the question of the intrinsic limits of the currently predominant semiconductor, silicon, and of those circumstances where it may be advantageous to turn to materials such as GaAs, InP, or SiC. Progress in the field of semiconductor materials science is closely connected to the development of new or improved characterization techniques. These are tending towards atomic dimensions on the one hand and to the possibility of characterizing semiconductor wafers of increased diameter on the other hand. This timely publication comprises 20 invited and 54 contributed papers from more than 70 research institutes and universities in 23 countries, and offers a useful overview of the subject. |
| TOC: | Table of Contents |
| Prices: | USD: 298.00 / EUR: 216.00 |
