The Electrical Activity of Dislocations in Edge-Defined Film-Fed Growth Silicon
W.D. Sawyer, R.O. Bell, Andreas Schönecker |
p3 |
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Correlation of Structural and Electronic Properties from Dislocations in Semiconductors
Joerg Weber |
p13 |
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How Can Dislocations Enhance the Efficiency of Photovoltaic Solar Cells?
H.F. Mataré |
p25 |
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About the Electrical Conductivity of Dislocations in Multicrystalline Silicon Solar Cells
H. El Ghitani, Marcel Pasquinelli, J.J. Simon, Santo Martinuzzi |
p31 |
|
g-Tensors of Electrons Bound to 60°-Dislocations in Ge and Si
Y.T. Rebane, Y.G. Shreter |
p35 |
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Formation of Misfit Dislocation Networks in Ge/Si as Dependent on the Substrate Orientation
M. Albrecht, S. Christiansen, P.O. Hansson, Horst P. Strunk, E. Bauser |
p41 |
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In Situ Observations of Dislocation Motion in Polycrystalline Silicon during Straining Experiment in a High-Voltage Electron Microscope
M. Werner, Martin Bartsch, U. Messerschmidt, D. Baither |
p47 |
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Theoretical Study of the Atomic and Electronic Structures of Grain Boundaries in Semiconductors
Masanori Kohyama, R. Yamamoto |
p55 |
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Structure of Grain Boundaries in Polycrystalline Semiconductors
S. McKernan, C.B. Carter |
p67 |
|
High Temperature Atomic Simulations of Grain Boundaries in Semiconductors Using a New Type of Periodic Boundary Conditions
O.B.M. Hardouin Duparc |
p75 |
