Calculation of the Free Energy of Different Configurations of {001}Σ=13 Grain Boundary in Silicon by the Quasiharmonic Method
B. Lebouvier, A. Hairie, F. Hairie, Gerard Nouet, E. Paumier |
p85 |
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Improved Quasiharmonic Methods for Grain Boundary Free Energy Calculations in Silicon
A. Hairie, F. Hairie, Gerard Nouet, E. Paumier, A.P. Sutton |
p91 |
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Calculation of Grain Boundary Free Energy by Molecular Dynamics and Tests on Silicon Perfect Crystal
N. Ralantoson, A. Hairie, F. Hairie, O.B.M. Hardouin Duparc, M. Hou, Gerard Nouet, E. Paumier |
p97 |
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Möbius Tight Binding Calculations for Grain Boundaries
O.B.M. Hardouin Duparc, M. Torrent |
p103 |
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Structural and Electrical Transport Properties of Grain Boundaries in High Temperature Superconductors
R. Gross |
p107 |
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The Microstructure of Sm2-xCexCuO4-δ
S. Christiansen, J. Markl, A. Bram, Horst P. Strunk, G. Saemann-Ischenko, H. Burzlaff |
p119 |
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Interaction of Grain Boundaries, Dislocations and Impurity Atoms in Semiconductors
Kinichi Masuda-Jindo |
p125 |
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Oxygen and Copper Precipitation in the Vicinity of the Silicon-Silicon-Dioxide Interface: Microstructure and Electrical Properties
A. Correia, D. Ballutaud, J.L. Maurice |
p133 |
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Non-Ideal I-V-Characteristics of Block-Cast Silicon Solar Cells
Otwin Breitenstein, J. Heydenreich |
p139 |
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Copper and Nickel Precipitation in a Σ=25 Silicon Bicrystal
Richard Rizk, X. Portier, G. Allais, Gerard Nouet |
p145 |
