PN Junction Formation by Two Steps Annealing
Chin Sheng Chen, Chiufeng Lin, M.C. He, De Ren Yang, Duan Lin Que |
p89 |
|
Generation of the P-Induced Misfit Dislocations during the Diffusion in Silicon: Analytical Determination of the Criticy Conditions
F. Gaiseanu, R. Plugaru, M. Bazu, O. Buiu |
p93 |
|
Processes of Defect Formation and Gettering under Dry Etching of Si and GaAs and Measurements of Diffusion Length Profile
Eugene B. Yakimov, O.V. Kononchuk |
p99 |
|
On the Interaction of Transition Metals with Silicon Grain Boundaries
M. Stemmer, Santo Martinuzzi, Marcel Pasquinelli |
p105 |
|
Dry Cleaning of Silicon Wafers in a Low Energy Hydrogen Plasma
J. Ramm, E. Beck, Alex Dommann, Ignaz Eisele, D. Krüger, G. Lippert |
p111 |
|
Reduction of Interfacial Carbon and Boron Contamination as Sources for Degradation of Epitaxial SiGe Layers Grown by MBE
H.P. Zeindl, G. Lippert, J. Drews, R. Kurps, H.J. Osten |
p117 |
|
Misfit Strain Engineering in Heteroepitaxial Structures
Hans Richter, A. Fischer, H. Kühne, M. Eichler |
p123 |
|
Surfactant-Mediated MBE of Strained-Layer III-V Semiconductor Heterostructures
K. Ploog, E. Tournié |
p129 |
|
Transition Metal Gettering in Poly-Silicon for Photovoltaic Applications (Abstract)
Eicke R. Weber, J. Bailey |
p141 |
|
Properties of Hydrogen, Oxygen and Carbon in Si
A.L. Endrös |
p143 |
