Elaboration and n-Type Doping of GaAlAs Epitaxial Layers
Pierre Gibart, P. Basmaji |
p1 |
|
Band Structure of the GaAs/AlAs Solid Solutions
M. Guzzi, J.L. Staehli |
p25 |
|
Optically-Detected Magnetic Resonance of Si-Doped GaAlAs
T.A. Kennedy, E. Glaser |
p53 |
|
Photo-Hall Characterization in GaAlAs
M. Mizuta |
p65 |
|
Thermal Emission Processes from DX Centers
Enrique Calleja, E. Munoz |
p73 |
|
Carrier Capture Processes at DX Centers
E. Munoz, Enrique Calleja |
p99 |
|
Studies of the DX Center Using Hydrostatic Pressure
D.K. Maude, Jean Claude Portal, R. Murray, T.J. Foster, L. Dmowski, L. Eaves, R. Newman, P. Basmaji, Pierre Gibart, J.J. Harris, R.B. Beall |
p121 |
|
Radiative Recombination in GaxAl1-xAs
J.C.M. Henning |
p145 |
|
Mössbauer Spectroscopy Studies of the DX Center
D.L. Williamson, Pierre Gibart |
p163 |
|
Electron Paramagnetic Resonance Studies of the DX Center in GaAlAs
Hans Jürgen von Bardeleben |
p181 |
