| ISBN / ISBN-13: | 3-908044-05-7 / 978-3-908044-05-5 |
|---|---|
| Year: | 1990 |
| Title: | Physics of DX Centers in GaAs Alloys [online] |
| Authors/Editors: | J.C. Bourgoin |
| Published in: | Solid State Phenomena, Volumes 10 |
| Category: | |
| Pages: | 310 |
| Edition: | |
| Description: | The DX center is a defect present in Gallium Arsenide and related alloys when these materials are doped with n-type impurities. The interest for the DX center is twofold: fundamental and technological. For physicists, the DX center exhibits peculiar properties which clearly indicate that it belongs to a new class of defect which had not yet been encountered. The identification of the DX center is also interesting for the technologists now that heterostructures based on the GaAs-GaAlAs system are increasingly used to realize high performance devices. As any deep level, the DX center traps free electrons, thus reducing the free carrier concentration provided by the donor impurities and their mobility. |
| TOC: | Table of Contents |
| Prices: | USD: 160.00 / EUR: 116.00 |
