Defect Engineering in VLSI-Technologies
H. Reimer, W. Nitzsche, Manfred Reiche |
p1 |
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Gettering in Silicon by Oxygen Related Defects, Stacking Faults and Thin Polycrystalline Films
Robert J. Falster |
p13 |
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Advances in the Understanding of Oxygen and Carbon in Silicon
C. Claeys, Jan Vanhellemont |
p21 |
|
Investigations of the Structure, Formation, and Annihilation of Thermally Induced Donors in Silicon
J. Reichel, Manfred Reiche, H. Geuther |
p33 |
|
Effect of Volume Defects on Gold Gettering in CZ-SI
K. Schmalz, I. Babanskaya, H. Gdanitz, F.G. Kirscht |
p41 |
|
Investigations of the Behaviour of Transition Metals in Silicon
W. Nitzsche, O. Brodersen, S. Hopfe, Manfred Reiche, I. Burck |
p49 |
|
Defect Engineering for Bicmos-Technology
G. Ritter, K.-E. Ehwald, P. Schley |
p57 |
|
Investigation of Gettering Phenomena in Semiconductors by Simultaneous Charge Collection Microscopy and Cathodoluminescence
M. Eckstein, A. Jakubowicz, M. Bode, H.U. Habermeier |
p65 |
|
Implantation Induced Defect Modification in P Doped Bipolar Structures
D. Krueger, J. Dziesiaty |
p73 |
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The Properties of the Defects in Heavy Implanted Silicon
V.G. Litovchenko, B.N. Romanyuk |
p79 |
