Defect Formation and Lateral Oxidation during Locos Processing
D. Knoll, T. Grabolla, K.-E. Ehwald |
p93 |
|
Defects and Their Influence on Parasitic Devices in Integrated Circuits
R. Prejdova |
p101 |
|
Volume Defect Formation in CZ SI Wafers and Related Electrical Effects
F.G. Kirscht, P. Fricke, J. Reichel, I. Babanskaya, R. Bertoldi, G. Buchheim, C. Hansch, P. Hübler, H.-J. Machold, R. Scharfe |
p103 |
|
Buried Layer Processing for Advanced Bipolar Technology
Eddy Simoen, L. Deferm, Jan Vanhellemont, C. Claeys |
p111 |
|
Oxygen Precipitation in Silicon: Correlation of the Experimental Results Obtained with IR Spectroscopy, Preferential Etching and X-Ray Topography
Erzsébet Hild, J. Seres, E.K. Pal, S. Nouredin, T. Kormàny |
p119 |
|
Gettering of Fast Diffusing Impurities by Radiation Defects in III-V Semiconductors
C. Ascheron, M. Rieth, H.A. Klose |
p127 |
|
On the Two-Step Nucleation in Internal Gettering for CMOS Fabrication Process
J. Jablonski, K. Kucharski, J. Wojciechowski |
p129 |
|
Creation of Deep Denuded Zones in CZ Silicon Wafers
G. Kissinger, W. Kissinger, K. Tittelbach, K. Schmalz |
p135 |
|
Defect Engineering for ULSI Epitaxial Silicon
George A. Rozgonyi, R.R. Kola |
p143 |
|
Computer-Simulation of Gold-Redistribution in Silicon
H. Gdanitz, K. Schmalz |
p159 |
