SiC Crystal Growth by Sublimation Method with Modification of Crucible and Insulation Felt Design
Jung Kyu Kim, Kap Ryeol Ku, Dong Jin Kim, Sang Phil Kim, Won Jae Lee, Byoung Chul Shin, Geun Hyoung Lee, Il Soo Kim |
p47 |
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Numerical Analysis of Growth Condition on SiC-CVD in the Horizontal Hot-Wall Reactor
Shinichi Nishizawa, Michel Pons |
p53 |
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Epitaxial Deposition of Silicon Carbide Films in a Horizontal Hot-Wall CVD Reactor
Alessandro Veneroni, Fabrizio Omarini, Maurizio Masi, Stefano Leone, Marco Mauceri, Giuseppe Pistone, Giuseppe Abbondanza |
p57 |
|
SiC and III-Nitride Growth in Hot-Wall CVD Reactor
Erik Janzén, Peder Bergman, Örjan Danielsson, Urban Forsberg, Christer Hallin, Jawad ul Hassan, Anne Henry, Ivan G. Ivanov, A. Kakanakova-Georgieva, P.O.Å. Persson, Qamar-ul Wahab |
p61 |
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New Achievements on CVD Based Methods for SiC Epitaxial Growth
Danilo Crippa, Gian Luca Valente, Alfonso Ruggiero, L. Neri, Ricardo Reitano, Lucia Calcagno, Gaetano Foti, Marco Mauceri, Stefano Leone, Giuseppe Pistone, Giuseppe Abbondanza, G. Abbagnale, Alessandro Veneroni, Fabrizio Omarini, L. Zamolo, Maurizio Masi, Fabrizio Roccaforte, G. Giannazzo, Salvatore Di Franco, Francesco La Via |
p67 |
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Increased Growth Rate in a SiC CVD Reactor Using HCl as a Growth Additive
Rachael L. Myers-Ward, Olof Kordina, Z. Shishkin, Shailaja P. Rao, R. Everly, Stephen E. Saddow |
p73 |
|
High Growth Rate (up to 20 µm/h) SiC Epitaxy in a Horizontal Hot-Wall Reactor
Jie Zhang, Janice Mazzola, Carl Hoff, Yaroslav Koshka, Jeff B. Casady |
p77 |
|
Homoepitaxial Growth of 4H-SiC Using CH3Cl Carbon Precursor
Yaroslav Koshka, Huang De Lin, Galyna Melnychuck, Michael S. Mazzola, Jeffery L. Wyatt |
p81 |
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Improved Surface Morphology and Background Doping Concentration in 4H-SiC(000-1) Epitaxial Growth by Hot-Wall CVD
Keiji Wada, Tsunenobu Kimoto, Kimito Nishikawa, Hiroyuki Matsunami |
p85 |
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4H-SiC Epitaxial Growth on SiC Substrates with Various Off-Angles
Hiroaki Saitoh, Tsunenobu Kimoto |
p89 |
