Silicon Carbide Crystal and Substrate Technology: A Survey of Recent Advances
H. McD. Hobgood, M.F. Brady, M.R. Calus, Jason R. Jenny, R.T. Leonard, D.P. Malta, Stephan G. Müller, Adrian R. Powell, Valeri F. Tsvetkov, R.C. Glass, Calvin H. Carter Jr. |
p3 |
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SiC Crystal Growth by HTCVD
Alexsandre Ellison, Björn Magnusson, Björn Sundqvist, G.R. Pozina, J. Peder Bergman, Erik Janzén, A. Vehanen |
p9 |
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Effects of Ionicity on Defect Physics of Wide-Band-Gap Semiconductors
Chris G. Van de Walle |
p15 |
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Possibility of Power Electronics Paradigm Shift with Wide Band Gap Semiconductors
Hiromichi Ohashi |
p21 |
|
High-Quality SiC Bulk Single Crystal Growth Based on Simulation and Experiment
Shinichi Nishizawa, Tomohisa Kato, Yasuo Kitou, Naoki Oyanagi, Fusao Hirose, Hirotaka Yamaguchi, Wook Bahng, Kazuo Arai |
p29 |
|
Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices
Jason R. Jenny, D.P. Malta, M.R. Calus, Stephan G. Müller, Adrian R. Powell, Valeri F. Tsvetkov, H. McD. Hobgood, R.C. Glass, Calvin H. Carter Jr. |
p35 |
|
Large Diameter 4H-SiC Substrates for Commercial Power Applications
Adrian R. Powell, R.T. Leonard, M.F. Brady, Stephan G. Müller, Valeri F. Tsvetkov, R. Trussell, Joseph J. Sumakeris, H. McD. Hobgood, Albert A. Burk, R.C. Glass, Calvin H. Carter Jr. |
p41 |
|
Investigation of Graphite Particle Inclusions in 6H-SiC Single Crystals Grown by Sublimation Boule Growth Technique
Taro Nishiguchi, Mitsutaka Nakamura, Toshiyuki Isshiki, Satoru Ohshima, Shigehiro Nishino |
p47 |
|
Study of Polytype Switching vs. Micropipes in PVT Grown SiC Single Crystals
Shao Ping Wang, Edward M. Sanchez, A. Kopec, M. Zhang, O. Hernandez |
p51 |
|
Analysis of Graphitization during Physical Vapor Transport Growth of Silicon Carbide
Peter J. Wellmann, Z.G. Herro, Sakwe Aloysius Sakwe, Pierre M. Masri, M.V. Bogdanov, S.Yu. Karpov, A.V. Kulik, M.S. Ramm, Yuri N. Makarov |
p55 |
