Thermodynamic Analysis of the Production of Silicon Carbide via Silicon Dioxide and Carbon
V.G. Sevastyanov, Yu S. Ezhov, E.P. Simonenko, N.T. Kuznetsov |
p59 |
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Faceted Growth of SiC Bulk Crystals
I.D. Matukov, D.S. Kalinin, M.V. Bogdanov, S.Yu. Karpov, D.Kh. Ofengeim, M.S. Ramm, J.S. Barash, E.N. Mokhov, A.D. Roenkov, Yu.A. Vodakov, M.G. Ramm, H. Helava, Yuri N. Makarov |
p63 |
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Theoretical Analysis of the Mass Transport in the Powder Charge in Long-Term Bulk SiC Growth
A.V. Kulik, M.V. Bogdanov, S.Yu. Karpov, M.S. Ramm, Yuri N. Makarov |
p67 |
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Free Growth of 4H-SiC by Sublimation Method
Jean Marc Dedulle, Mikhail Anikin, Michel Pons, Elisabeth Blanquet, Alexander Pisch, Roland Madar, Claude Bernard |
p71 |
|
Advanced PVT Growth of 2 & 3-Inch Diameter 6H SiC Crystals
Thomas Anderson, Donovan L. Barrett, J. Chen, W.T. Elkington, Ejiro Emorhokpor, A. Gupta, C.J. Johnson, R.H. Hopkins, Charles Martin, Thomas Kerr, E. Semenas, Andrew E. Souzis, C.D. Tanner, Murugesu Yoganathan, Ilya Zwieback |
p75 |
|
Radial Expansion Growth of SiC Single Crystals with Higher Crystal Quality
Tatsuo Fujimoto, Hiroshi Tsuge, Masakazu Katsuno, Noboru Ohtani, Hirokatsu Yashiro, Masashi Nakabayashi |
p79 |
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Growth and Characterization of SiC Bulk Crystals Grown on an Off-Oriented (11-20) Seed Crystal
Masakazu Katsuno, Noboru Ohtani, Tatsuo Fujimoto, Hirokatsu Yashiro |
p83 |
|
Growth of Bulk SiC by Halide Chemical Vapor Deposition
M. Fanton, Marek Skowronski, David W. Snyder, Hun Jae Chung, Saurav Nigam, B. Weiland, Sung Wook Huh |
p87 |
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Characterization of Thick 2-Inch 4H-SiC Layers Grown by the Continuous Feed-Physical Vapor Transport Method
Didier Chaussende, Carole Balloud, Laurent Auvray, Francis Baillet, Marcin Zielinski, Sandrine Juillaguet, Michel Mermoux, Etienne Pernot, Jean Camassel, Michel Pons, Roland Madar |
p91 |
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Effect of Thermal Field on Interface Step Structures during PVT Growth of (0001)Si 6H-SiC
Z.G. Herro, Boris M. Epelbaum, Matthias Bickermann, Pierre M. Masri, Albrecht Winnacker |
p95 |
