Preparation of Semi-Insulating Silicon Carbide by Vanadium Doping during PVT Bulk Crystal Growth
Matthias Bickermann, Dieter Hofmann, Thomas L. Straubinger, Roland Weingärtner, Albrecht Winnacker |
p51 |
|
PVT Growth of p-Type and Semi-Insulating 2-Inch 6H-SiC Crystals
Michael Rasp, Thomas L. Straubinger, Erwin Schmitt, Matthias Bickermann, Horst Sadowski, Sergey A. Reshanov |
p55 |
|
Photoluminescence and Thermally Stimulated Luminescence in Semi-Insulating SiC
Yu.M. Suleimanov, S. Lulu, I. Tarasov, Sergei S. Ostapenko, V.D. Heydemann, Matthew D. Roth, Olof Kordina, Mike F. MacMillan, Stephen E. Saddow |
p59 |
|
Growth of Phosphorus-Doped 6H-SiC Single Crystals by the Modified Lely Method
Kurt Semmelroth, Frank Schmid, D. Karg, Gerhard Pensl, Manfred Maier, Siegmund Greulich-Weber, Johann Martin Spaeth |
p63 |
|
Effective Increase of Single-Crystalline Yield during PVT Growth of SiC by Tailoring of Radial Temperature Gradient
Z.G. Herro, Matthias Bickermann, Boris M. Epelbaum, Pierre M. Masri, Albrecht Winnacker |
p67 |
|
Uniformization of Radial Temperature Gradient in Sublimation Growth of SiC
H. Tanaka, Taro Nishiguchi, Makato Sasaki, Satoru Ohshima, Shigehiro Nishino |
p71 |
|
Effect of Ambient on 4H-SiC Bulk Crystals Grown by Sublimation
R.R Ciechonski, Rositza Yakimova, Mikael Syväjärvi, Erik Janzén |
p75 |
|
Continuous Growth of SiC Single Crystal from Ultrafine Particle Precursor
Yoshimitsu Yamada, Kazukiyo Sagawa, Shinichi Nakashima |
p79 |
|
Defect Reduction in SiC Crystals Grown by the Modified Lely Method
Mikhail Anikin, Michel Pons, Etienne Pernot, Roland Madar |
p83 |
|
A Study of HTCVD Renewing of the SiC Polycrystalline Source during the PVT Process
Ludovic Charpentier, Francis Baillet, Didier Chaussende, Etienne Pernot, Michel Pons, Roland Madar |
p87 |
