Silicon Carbide Technology in New Era
Hiroyuki Matsunami |
p3 |
|
Characterisation and Defects in Silicon Carbide
Peder Bergman, H. Jakobsson, L. Storasta, F.H.C. Carlsson, Björn Magnusson, S.G. Sridhara, G.R. Pozina, H. Lendenmann, Erik Janzén |
p9 |
|
Opportunities and Technical Strategies for Silicon Carbide Device Development
James A. Cooper |
p15 |
|
High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production
Stephan G. Müller, M.F. Brady, W.H. Brixius, G. Fechko, R.C. Glass, D. Henshall, H. McD. Hobgood, Jason R. Jenny, R.T. Leonard, D.P. Malta, Adrian R. Powell, Valeri F. Tsvetkov, S.T. Allen, John J. Palmour, Calvin H. Carter Jr. |
p23 |
|
Growth and Defect Reduction of Bulk SiC Crystals
Noboru Ohtani, Tatsuo Fujimoto, Masakazu Katsuno, Takashi Aigo, Hirokatsu Yashiro |
p29 |
|
Growth of 3-inch Diameter 6H-SiC Single Crystals by Sublimation Physical Vapor Transport
Shao Ping Wang, Edward M. Sanchez, A. Kopec, S. Poplawski, R. Ware, S.N. Holmes, Cengiz M. Balkas, A.G. Timmerman |
p35 |
|
Lateral Enlargement of Silicon Carbide Crystals
Henrik Jacobsson, Rositza Yakimova, P. Råback, Mikael Syväjärvi, Jens Birch, Erik Janzén |
p39 |
|
Numerical Simulation of Heat and Mass Transfer in SiC Sublimation Growth
Shinichi Nishizawa, Tomohisa Kato, Yasuo Kitou, Naoki Oyanagi, Kazuo Arai |
p43 |
|
4H Polytype Grain Formation in PVT-Grown 6H-SiC Ingots
Tatsuo Fujimoto, Masakazu Katsuno, Noboru Ohtani, Takashi Aigo, Hirokatsu Yashiro |
p47 |
|
The Development of 2in 6H-SiC Wafer with High Thermal-Conductivity
Youichi Miyanagi, Koji Nakayama, Hiromu Shiomi, Shigehiro Nishino |
p51 |
