Evolution of Crystal Mosaicity during Physical Vapor Transport Growth of SiC
Masakazu Katsuno, Noboru Ohtani, Tatsuo Fujimoto, Takashi Aigo, Hirokatsu Yashiro |
p55 |
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Reduction of Macrodefects in Bulk SiC Single Crystals
Cengiz M. Balkas, Andrei A. Maltsev, Matthew D. Roth, V.D. Heydemann, Mrityunjay Sharma, Nikolay K. Yushin |
p59 |
|
Model for Macroscopic Slits in 6H- and 4H-SiC Single Crystals
Jürgen Wollweber, H. J. Rost, D. Schulz, D. Siche |
p63 |
|
Macrodefect Generation in SiC Single Crystals Caused by Polytype Changes
H. J. Rost, J. Doerschel, D. Schulz, D. Siche, Jürgen Wollweber |
p67 |
|
The Nucleation of Polytype Inclusions during the Sublimation Growth of 6H and 4H Silicon Carbide
Edward M. Sanchez, A. Kopec, S. Poplawski, R. Ware, S.N. Holmes, Shao Ping Wang, A.G. Timmerman |
p71 |
|
Characterization of Inclusions in SiC Bulk Crystals Grown by Modified Lely Method
Fusao Hirose, Yasuo Kitou, Naoki Oyanagi, Tomohisa Kato, Shinichi Nishizawa, Kazuo Arai |
p75 |
|
Observation of Planar Defects in 2-inch SiC Wafer
Hideaki Tanaka, Taro Nishiguchi, Makato Sasaki, Shigehiro Nishino |
p79 |
|
Flux-Controlled Sublimation Growth by an Inner Guide-Tube
Yasuo Kitou, Wook Bahng, Tomohisa Kato, Shinichi Nishizawa, Kazuo Arai |
p83 |
|
Growth and Evaluation of High Quality SiC Crystal by Sublimation Method
Naoki Oyanagi, Hirotaka Yamaguchi, Tomohisa Kato, Shinichi Nishizawa, Kazuo Arai |
p87 |
|
'Insitu Synthesis' of Source Material from Elemental Si and C during SiC PVT Growth Process and Characterization Using Digital X-Ray Imaging
Peter J. Wellmann, Z.G. Herro, Thomas L. Straubinger, Albrecht Winnacker |
p91 |
