Growth of Highly Aluminum-Doped p-type 6H-SiC Single Crystals by the Modified Lely Method
Norbert Schulze, Jürgen Gajowski, Kurt Semmelroth, Michael Laube, Gerhard Pensl |
p45 |
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Study of Boron Incorporation During PVT Growth of p-type SiC Crystals
Matthias Bickermann, Dieter Hofmann, Michael Rasp, Thomas L. Straubinger, Roland Weingärtner, Peter J. Wellmann, Albrecht Winnacker |
p49 |
|
Features of Semi-Insulating SiC Single-Crystal Growth by Physical Vapor Transport
Sergey A. Reshanov, V.P. Rastegaev, Yuri M. Tairov |
p53 |
|
Virtual Reactor: A New Tool for SiC Bulk Crystal Growth Study and Optimization
M.V. Bogdanov, O.V. Bord, A.O. Galyukov, S.Yu. Karpov, A.V. Kulik, S.K. Kochuguev, A.E. Komissarov, D.Kh. Ofengeim, A.M. Serkov, A.V. Tsiryulnikov, I.A. Zhmakin, M.S. Ramm, A.I. Zhmakin, Yuri N. Makarov |
p57 |
|
Coupled Thermodynamic - Mass Transfer Modeling of the SiC Boule Growth by the PVT Method
Alexander Pisch, Elisabeth Blanquet, Michel Pons, Claude Bernard, Jean Marc Dedulle, Roland Madar |
p61 |
|
Numerical Simulation of Thermal Stress Formation During PVT-Growth of SiC Bulk Crystals
M. Selder, L. Kadinski, F. Durst, Thomas L. Straubinger, Peter J. Wellmann, Dieter Hofmann |
p65 |
|
Crystal Growth of 15R-SiC and Various Polytype Substrates
Taro Nishiguchi, T. Shimizu, Makato Sasaki, S. Oshima, Shigehiro Nishino |
p69 |
|
Micropipe Filling by the Sublimation Close Space Technique
Tomoaki Furusho, Satoru Ohshima, Shigehiro Nishino |
p73 |
|
Mechanism for Damage Healing of Cracked 6H-SiC Substrates by the Sublimation Method
T. Shimizu, Taro Nishiguchi, Makato Sasaki, Satoru Ohshima, Shigehiro Nishino |
p77 |
|
Chemical Vapor Deposition of SiC by the Temperature Oscillation Method
Yu.V. Martynov |
p81 |
