Seed Surface Preparation for SiC Sublimation Growth
Bernard Pelissier, Cécile Moulin, Etienne Pernot, Mikhail Anikin, Philippe Grosse, Christian Faure, Bernard Ferrand, M. Couchaud, Gérard Basset, Roland Madar |
p47 |
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Single Crystal Growth of 6H-SiC on Saw-Damaged Substrate by Sublimation Method
Sohei Okada, Taro Nishiguchi, T. Shimizu, Makato Sasaki, S. Oshima, Shigehiro Nishino |
p51 |
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Thermal Decomposition Cavities in Physical Vapor Transport Grown SiC
Edward M. Sanchez, V.D. Heydemann, David W. Snyder, Gregory S. Rohrer, Marek Skowronski |
p55 |
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Initial Stage of Crystallization in the Growth of Silicon Carbide on Substrate with Micropipes
I.I. Khlebnikov, Dimitri I. Cherednichenko, Yuri I. Khlebnikov, Tangali S. Sudarshan |
p59 |
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Nucleation of Dislocations during Physical Vapor Transport Growth of Silicon Carbide
Edward M. Sanchez, V.D. Heydemann, David W. Snyder, Gregory S. Rohrer, Marek Skowronski |
p63 |
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Plastic Deformation and Residual Stresses in SiC Boules Grown by PVT
Seo Young Ha, Gregory S. Rohrer, Marek Skowronski, V.D. Heydemann, David W. Snyder |
p67 |
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Digital X-Ray Imaging of SiC PVT Process: Analysis of Crystal Growth and Powder Source Degradation
Peter J. Wellmann, Matthias Bickermann, Dieter Hofmann, L. Kadinski, M. Selder, Thomas L. Straubinger, Albrecht Winnacker |
p71 |
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SiC Single Crystal Growth Rate Measurement by In-Situ Observation using the Transmission X-Ray Technique
Naoki Oyanagi, Shinichi Nishizawa, Tomohisa Kato, Hirotaka Yamaguchi, Kazuo Arai |
p75 |
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Role of Temperature Gradient in Bulk Crystal Growth of SiC
Cengiz M. Balkas, Andrei A. Maltsev, Matthew D. Roth, Nikolay K. Yushin |
p79 |
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Pressure Effect in Sublimation Growth of Bulk SiC
Yasuo Kitou, Wook Bahng, Shinichi Nishizawa, Shigehiro Nishino, Kazuo Arai |
p83 |
