Enlargement of SiC Crystals: Defect Formation at the Interfaces
Mikhail Anikin, Michel Pons, K. Chourou, O. Chaix-Pluchery, Jean Marie Bluet, V. Lauer, R. Pons |
p45 |
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Impurity Incorporation During Sublimation Bulk Crystal Growth of 6H- and 4H-SiC
Noboru Ohtani, Masakazu Katsuno, J. Takahashi, Hirokatsu Yashiro, M. Kanaya, S. Shinoyama |
p49 |
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Optically Transparent 6H-Silicon Carbide
Andrey Bakin, Sergey I. Dorozhkin, A.S. Zubrilov, N.I. Kuznetsov, Yuri M. Tairov |
p53 |
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Modelling of the PVT-SiC Bulk Growth Process Taking into Account Global Heat Transfer, Mass Transport and Heat of Crystallization and Results on its Experimental Verification
Stephan G. Müller, Robert Eckstein, Dieter Hofmann, L. Kadinski, P. Kaufmann, M. Kölbl, Erwin Schmitt |
p57 |
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Modeling Analysis of Temperature Field and Species Transport Inside the System for Sublimation Growth of SiC in Tantalum Container
Yu.E. Egorov, A.O. Galyukov, S.G. Gurevich, Yuri N. Makarov, E.N. Mokhov, M.G. Ramm, M.S. Ramm, A.D. Roenkov, A.S. Segal, Yu.A. Vodakov, A.N. Vorob'ev, A.I. Zhmakin |
p61 |
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A Coupled Finite Element Model for the Sublimation Growth of SiC
P. Råback, Risto M. Nieminen, Rositza Yakimova, M. Tuominen, Erik Janzén |
p65 |
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Studies on SiC Liquid Phase Crystallization as Technique for SiC Bulk Growth
M. Müller, Matthias Bickermann, Dieter Hofmann, Arnd Dietrich Weber, Albrecht Winnacker |
p69 |
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Dissolution and Growth of Silicon Carbide Crystals in Melt-Solutions
V. Ivantsov, Vladimir Dmitriev |
p73 |
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Sublimation Growth of Bulk β-SiC Crystals on (100) and (111) β-SiC Substrates
H.N. Jayatirtha, Michael G. Spencer |
p77 |
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SiC Epitaxial Layer Growth in a Novel Multi-Wafer VPE Reactor
Albert A. Burk, Michael J. O'Loughlin, S.S. Mani |
p83 |
