| ISBN / ISBN-13: | 0-87849-790-0 / 978-0-87849-790-4 |
|---|---|
| Year: | 1998 |
| Title: | Silicon Carbide, III-Nitrides and Related Materials [online] |
| Authors/Editors: | G. Pensl, H. Morkoç, B. Monemar and E. Janzén |
| Published in: | Materials Science Forum, Volumes 264 - 268 |
| Category: | Proceedings of the 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N'97), Stockholm, Sweden, September 1997 |
| Pages: | 1606 |
| Edition: | hardcover, 2-vol. Set |
| Description: | This two-volume set documents the present understanding of many topics of interest, such as the growth of bulk crystals, the growth of epitaxial layers, theoretical modelling, the characterization of as-grown material, the development of suitable processes and of electronic devices which can operate under extreme conditions and exhibit outstanding properties. PART 1: 1. SiC BULK GROWTH. 2. SiC EPITAXY. 2.1 Homoepitaxial Growth. 2.2 Heteroepitaxial Growth. 3. THEORY. 4. CHARACTERISATION OF SiC. 4.1 Surfaces and Interfaces. 4.2 Structural Characterisation. 4.3 Optical Characterisation. 4.4 Electrical Characterisation. 4.5 Magnetic Resonance Characterisation. 4.6 Thermal and Mechanical Properties. 5. MEASUREMENT TECHNIQUES. PART 2: 6. PROCESSING OF SiC. 6.1 Doping and Implantation. 6.2 Contacts and Etching. 6.3 Dielectrics. 6.4 Micromachining. 7. SiC DEVICES. 7.1 Surveys. 7.2 Unipolar Devices. 7.3 Bipolar Devices. 7.4 Sensors. 8. GROWTH OF III-NITRIDES. 9. CHARACTERISATION OF III-NITRIDES. 9.1 Structural Characterisation. 9.2 Optical Characterisation. 9.3 Electrical Characterisation. 10. PROCESSING OF III-NITRIDES. 11. III-NITRIDE DEVICES. 12. RELATED MATERIALS. |
| TOC: | Table of Contents |
| Prices: | USD: 550.00 / EUR: 398.00 |
