Resonance Acceptor States and THz Generation in Uniaxially Strained p-Ge
I.V. Altukhov, E.G. Chirkova, M.S. Kagan, K.A. Korolev, V.P. Sinis, K. Schmalz, M.A. Odnoblyudov, I.N. Yassievich |
p71 |
|
Ionized Impurity Scattering in Isotopically Engineered, Compensated Ge:Ga,As
K.M. Itoh, Takahiro Kinoshita, W. Walukiewicz, J.W. Beeman, Eugene E. Haller, J. Muto, J.W. Farmer, V.I. Ozhogin |
p77 |
|
Defects in SiGe
Arne Nylandsted-Larsen |
p83 |
|
Acceptor States in Boron Doped SiGe Quantum Wells
K. Schmalz, M.S. Kagan, I.V. Altukhov, K.A. Korolev, Dmitry Orlov, V.P. Sinis, S.G. Tomas, K.L. Wang, I.N. Yassievich |
p91 |
|
Substitutional Carbon in Ge and Si1-xGex.
L. Hoffmann, J.C. Bach, J. Lundsgaard Hansen, Arne Nylandsted Larsen, Brian Bech Nielsen, P. Leary, R. Jones, Sven Öberg |
p97 |
|
Ge Content Dependence of the Infrared Spectrum of Interstitial Oxygen in Crystalline Si-Ge
D. Wauters, Paul Clauws |
p103 |
|
Optical Investigation of Ge-Rich Ge1-xSix (0≤ x ≤ 0.1) Alloys
M. Franz, Klaus Pressel, K.F. Dombrowski, H. Rücker, A. Barz, P. Dold, K.W. Benz |
p109 |
|
Electrical Characterization of Electron Beam Induced Defects in Epitaxially Grown Si1-xGex
M. Mamor, F. Danie Auret, S.A. Goodman, G. Myburg, Prakash N.K. Deenapanray, W.E. Meyer |
p115 |
|
Lattice Defects in Si1-xGex Epitaxial Diodes Induced by 20-MeV Alpha Rays
H. Ohyama, Jan Vanhellemont, Eddy Simoen, C. Claeys, Y. Takami, K. Hayama, H. Sunaga, Jef Poortmans, Matty Caymax |
p121 |
|
Positron Annihilation Study of Electron-Irradiated Silicon-Germanium Bulk Alloys
Atsuo Kawasuso, Sohei Okada, Ichiro Yonenaga, T. Honda, Masashi Suezawa |
p127 |
