| ISBN / ISBN-13: | 0-87849-786-2 / 978-0-87849-786-7 |
|---|---|
| Year: | 1997 |
| Title: | Defects in Semiconductors 19 [online] |
| Authors/Editors: | Gordon Davies and Maria Helena Nazaré |
| Published in: | Materials Science Forum, Volumes 258 - 263 |
| Category: | Proceedings of the 19th International Conference on Defects in Semiconductors (ICDS-19), Aveiro, Portugal, July 1997 |
| Pages: | 1932 |
| Edition: | 3-vol. Set |
| Description: | Modern Technology depends upon silicon chips, and life as we know it would hardly be possible without semiconductor devices. Control over a given semiconductor's electronic properties is achieved via defect engineering, and the scientific and technical challenges in this field are manifold. The present three-volume set provides a complete update on recent developments in the general area of defects in semiconductors, and covers a wide range of subjects. It will be Invaluable to professionals working in the field of semiconductor research and to all of those who need to be kept up-to-date on the most recent findings in this area. Part 1: 1. Plenary Sessions. 2. Germanium. 3. Alloys of Si, Ge and C. 4. Silicon: Hydrogen. 5. Silicon: Oxygen. 6. Silicon: Metals. 7. Silicon: Radiation Damage. Part 2: 8. Silicon Carbide. 9. Diamond. 10. Indium Phosphide. 11. Gallium Arsenide: Impurities. 12. Antisite Defects and EL2. 13. Gallium Arsenide: Radiation Damage. 14. Gallium Phosphide. 15. Gallium Nitride. 16. Other III-V Compounds. Part 3: 17. Aluminium Gallium Arsenide. 18. II-VI Compound Semiconductors. 19. Cadmium Fluoride. 20. Chalcopyrites and Other Host Lattices. 21. Erbium. 22. Low Dimensional Structures. 23. Surfaces and Interfaces. 24. Diffusion. |
| TOC: | Table of Contents |
| Prices: | USD: 662.00 / EUR: 479.00 |
