Unified Theory of Defects in Insulators
Y. Toyozawa |
p1 |
|
Optical and Magnetic Resonance Studies of Defects in GaN
E.R. Glaser |
p9 |
|
The Effective Mass Donor in Galliumnitride
H.C. Alt, B.K. Meyer, D. Volm, A. Graber, M. Drechsler, D.M. Hofmann, T. Detchprohm, A. Amano, Isamu Akasaki |
p17 |
|
Free Electrons and Resonant Donor State in Gallium Nitride
P. Perlin, T. Suski, H. Teisseyre, M. Leszczyński, I. Grzegory, J. Jun, M. Boćkowski, Sylwester Porowski, P. Boguslawski, J. Bernholc, T.D. Moustakas |
p23 |
|
Electrically and Optically Detected Magnetic Resonance Studies of GaN-Based Heterostructures
W.E. Carlos, E.R. Glaser, T.A. Kennedy, Satoshi Nakamura |
p25 |
|
Carrier Localization in Gallium Nitride
C. Wetzel, W. Walukiewicz, Eugene E. Haller, J.W. Ager, A. Chen, S. Fischer, P.Y. Yu, R. Jeanloz, I. Grzegory, Sylwester Porowski, T. Suski, Hiroshi Amano, Isamu Akasaki |
p31 |
|
Time-Resolved ODMR Measurements on the 'Yellow Luminescence' in MOCVD-Grown GaN Films
F.K. Koschnick, Johann Martin Spaeth, E.R. Glaser, K. Doverspike, L.B. Rowland, D. Kurt Gaskill, D.K. Wickenden |
p37 |
|
Luminescence of Doped and Undoped Bulk Crystals of GaN
H. Teisseyre, T. Suski, P. Perlin, I. Gorczyca, M. Leszczyński, I. Grzegory, J. Jun, Sylwester Porowski |
p43 |
|
Photoluminescent Properties of Undoped GaN Prepared by Atmospheric Vapor Phase Epitaxy
Gyu-Chul Yi, Bruce W. Wessels |
p49 |
|
Charactrization of Residual Transition Metal Ions in GaN and AIN
J. Baur, Ulrich Kaufmann, M. Kunzer, J. Schneider, Hiroshi Amano, Isamu Akasaki, T. Detchprohm, K. Hiramatsu |
p55 |
