Sn Mössbauer Study of Ion Implanted GaN
M. Fanciulli, M. Lindroos, G. Weyer, T.D. Moustakas
|
p61 |
Ni Complexes in Diamond
Jonathan P. Goss, A. Resende, R. Jones, Sven Öberg, Patrick R. Briddon
|
p67 |
Nickel and Nitrogen(?) Related Defects in High Pressure Synthetic Diamond
Maria Helena Nazaré, L.M. Rino, H. Kanda
|
p73 |
Ni Related Centers in Synthetic Diamond
D.M. Hofmann, P. Christmann, D. Volm, Klaus Pressel, Luís Pereira, Leonel Santos, E. Pereira
|
p79 |
Defect Control and Defect Engineering in Ion-Implanted Diamond
A.A. Gippius
|
p85 |
Ga Bound Excitons in 6H-SiC
Anne Henry, Christer Hallin, Ivan G. Ivanov, Peder Bergman, Olof Kordina, Bo Monemar, Erik Janzén
|
p91 |
Photoluminescence and Electron-Spin-Resonance Studies of Defects in Ion-Implanted Thermal SiO2 Films
Hironobu Nishikawa, Hisao Fukui, Eiji Watanabe, D. Ito, M. Takiyama, A. Ieki, Y. Ohki
|
p97 |
Theory of Interstitial Oxygen in Silicon and Germanium
E. Artacho, F. Yndurain
|
p103 |
Impurity Behavior during Si Single Crystal Growth from the Melt
T. Izumi, H. Morita, T. Fujiwara, H. Fujiwara, S. Inami
|
p109 |
Lattice Sites of Li in Si and Ge
Ulrich Wahl, S.G. Jahn, M. Restle, H. Quintel, H. Hofsäss
|
p115 |