| ISBN / ISBN-13: | 0-87849-716-1 / 978-0-87849-716-4 |
|---|---|
| Year: | 1995 |
| Title: | Defects in Semiconductors 18 [online] |
| Authors/Editors: | M. Suezawa and H. Katayama-Yoshida |
| Published in: | Materials Science Forum, Volumes 196 - 201 |
| Category: | Proceedings of the 18th International Conference on Defects in Semiconductors (ICDS-18), Sendai, Japan, July 1995 |
| Pages: | 2268 |
| Edition: | |
| Description: | The study of defects in semiconductors has never been independent of the progress in semiconductor technology. With rapid development in semiconductor device technology, novel types of defects as well as very peculiar behavior of defects in semiconductors have been found one after another. New subjects in the basic study of defects have often been arisen from experiences in the practical field. Great progress has also been achieved in device production technology on the basis of the knowledge clarified in the basic field. The present publication presents a very comprehensive array of subjects, ranging from basic aspects of defect properties to practically important phenomena related to device production engineering. Among them, hydrogen-related problems, defects and impurities in GaN and related widegap semiconductors and grown defects in Czochralski-grown silicon may be regarded as highlights. |
| TOC: | Table of Contents |
| Prices: | USD: 690.00 / EUR: 500.00 |
