Influence of Tunneling on Trapping Kinetics in Thin Layers
S. Scharf, M. Schmidt, D. Bräunig |
p91 |
|
On the Nature of the Radiation-Induced Failure of Si-SiO2 Structures Annealed in Hydrogen
S.N. Kuznetsov, V.A. Gurtov |
p99 |
|
Characteristics of Si-SiO2 Systems Obtained by Thermal Oxidation of Silicon Surface Covered with Silicon-Hydrogen Layers
V.Y. Uritsky, B.B. Loginov |
p105 |
|
Passivation and Depassivation of Electrically Active Centers in the Polysilicon-Oxide-Silicon Structures
I.A. Uritskaya, V.Y. Uritsky |
p109 |
|
Role of Electron / Hole Processes in the Initial Stage of Silicon Anodization
V.X. Uritsky |
p115 |
|
Effect of Structure of Hydrogenated SiNx:H Films on the Dissociation Mechanism of Si-H and N-H Bonds
E.B. Gorokhov, A.G. Noskov, V.V. Vasilyev, E.M. Trukhan, V.N. Ovsyuk, G.Yu. Salieva |
p119 |
|
Stress Generation and Relaxation in Passivating Films and its New Application in Nanolitography
E.B. Gorokhov, A.G. Noskov, V.Ya. Prinz |
p129 |
|
High Resolution Surface Characterisation Using STM Light Emission Techniques
J. Horn, N. Marx, B.L. Weiss, H.L. Hartnagel, M. Stehle, M.M. Bischoff, H. Pagnia |
p145 |
|
Passivation of Semiconductors by the Remote Plasma Technique
Wilhelm Kulisch, F. Kiel, M. Schiller, S. Reinke, R. Kassing |
p155 |
|
AES Study of the GaAs-Germanium Oxynitride Interface
D. Jishiashvili, R. Dzhanelidze, Z. Shiolashvili, I. Nakhutsrishvili |
p165 |
