| ISBN-13: | 978-0-87849-672-3 |
|---|---|
| Year: | 1993 |
| Title: | Hydrogen in Compound Semiconductors [online] |
| Authors/Editors: | S.J. Pearton |
| Published in: |
Materials Science Forum, Volumes 148 - 149
|
| Category: | |
| Pages: | 546 |
| Edition: | |
| Description: | State-of-the-art reviews on all the major areas of interest are brought together in this book, namely the role of hydrogen during epitaxial growth, its entry into the material during processing, its subsequent diffusivity and bonding with dopants, other impurities or defects, its effect on device performance and reliability and positive uses for hydrogen in passivating surfaces. The experts in each of these fields have produced an outstanding body of work, crystallized in this book which provides an entry point for new workers in the field and bring an enhanced understanding for those already in it. |
| TOC: | Table of Contents |
| Prices: | USD: 276.00 / EUR: 212.00 |
