Nitrogen Donors, Aluminum Acceptors and Strong Impurity Vibrational Modes in 4H-Silicon Carbide (4H-SiC)
W. Götz, Adolf Schöner, W. Suttrop, Gerhard Pensl, Wolfgang J. Choyke, R. Steiner, S. Leibenzeder |
p69 |
|
Magnetic Circular Dichroism and Optically Detected EPR of a Vanadium Impurity in 6H-Silicon Carbide
J. Reinke, H. Weihrich, Siegmund Greulich-Weber, Johann Martin Spaeth |
p75 |
|
Boron in Cubic Silicon Carbide: Dynamic Effects in ESR
V. Bratus, N.P. Baran, V.M. Maksimenko, T. Petrenko, V. Romanenko |
p81 |
|
ODMR Studies of MOVPE-Grown GaN Epitaxial Layers
M. Kunzer, Ulrich Kaufmann, Karin Maier, J. Schneider, N. Herres, Isamu Akasaki, Hiroshi Amano |
p87 |
|
Iron Acceptors in Gallium Nitride (GaN)
Karin Maier, M. Kunzer, Ulrich Kaufmann, J. Schneider, Bo Monemar, Isamu Akasaki, Hiroshi Amano |
p93 |
|
Donors in Wurtzite GaN Films: A Magnetic Resonance and Photoluminescence Study
W.E. Carlos, Jaime A. Freitas Jr., M. Asif Khan, D.T. Olson, J.N. Kuznia |
p99 |
|
The Bound Exciton Model for Isoelectronic Centers in Silicon
Gordon Davies, Maria Helena Nazaré |
p105 |
|
Near-Surface Reactions of Gold and Silver in Silicon
H. Feichtinger, E. Sturm |
p111 |
|
A New Photoluminescent Center in Mercury-Doped Silicon
Anne Henry, Bo Monemar, Peder Bergman, J. Lennart Lindström, Y. Zhang, James W. Corbett |
p117 |
|
Electrical and Optical Characterization of Magnesium- and Calcium-Related Defect Centers in Silicon
C. Häßler, Gerhard Pensl |
p123 |
