Source of Atomic Oxygen and its Application to Material Oxidation
A.M. Pointu, M. Touzeau, O. Guymont
|
p159 |
Practical Applications of In-Situ Plasma-Etching Diagnostic Techniques
D.J. Thomas, P. Southworth, M.C. Flowers, N.J. Dartnell, R. Greef, Y. Liu
|
p171 |
Laser-Aided Diagnostics of Processing Plasmas
K. Muraoka, M. Maeda
|
p191 |
Radical Kinetics in Processing Plasmas: Optical Diagnostics of Gas Phase and Surface Reactions
J.P. Booth, G. Hancock
|
p219 |
Negatively Charged Particles in Fluorocarbon RF Etch Plasmas: Density Measurements Using Microwave Resonance and the Photodetachment Effect
M. Haverlag, Akihiro Kono, G.M.W. Kroesen, F.J. de Hoog
|
p235 |
Biased Electron Cyclotron Resonance Chemical-Vapor Deposition of Silicon Dioxide Inter-Metal Dielectric Thin Films
P. Shufflebotham, M. Weise, D. Pirkle, D. Denison
|
p255 |
TEOS-Based Oxides: Deposition Dependent Properties
M. Saran, I. Emesh
|
p269 |
Plasma Enhanced Chemical Vapor Deposited Silicon and Silicon Dioxide Films for Indium Phosphide MISFET Technology
M. Shokrani, V.J. Kapoor
|
p285 |
Physical and Electrical Properties of Silicon Nitride and Oxynitride Films Prepared by Plasma Enhanced CVD
J. Vuillod
|
p301 |
Preparation and Properties of PECVD Silicon Nitride Films from SiH4 + NH3 and/or NF3 and SiF4+ NH3 Gas Mixtures
C. Gómez-Aleixandre, O. Sanchez, J.M. Albella
|
p319 |