D- Centers in High Magnetic Fields and Quantum Wells
J. Zhu, S.G. Louie, T. Pang |
p1 |
|
Electronic States of Thermal Donors in Semiconductors
C.A.J. Ammerlaan, T. Gregorkiewicz |
p9 |
|
Impurity Control in Silicon Crystals for G-Bit Scale Integration
Toshihiko Abe |
p17 |
|
Optical Spectroscopy of Shallow Impurity States in Semiconductor Quantum Wells
Bo Monemar, P.O. Holtz, C.I. Harris, J. Peder Bergman, H. Kalt, M. Sundaram, J.L. Merz, A.C. Gossard, K. Köhler, T. Schweizer |
p29 |
|
Extremely Heavy Doping of Carbon in GaAs and InGaAs
Makoto Konagai |
p37 |
|
Carbon and Silicon Impurity Centers in GaAs
R.C. Newman |
p45 |
|
Non-Equilibrium Point Defects and Diffusion in GaAs and Related Compounds
U.M. Gösele, T.Y. Tan, M. Uematsu, K. Wada |
p53 |
|
Self-Compensation in P, As, and N Doped ZnSe
D.J. Chadi, N. Troullier |
p61 |
|
Vacancies in Semiconductors Characterized by Slow Positron and Their Effect on Electrical Properties
J.L. Lee |
p67 |
|
Effect of External Pressure and Internal Stress on Imyurity Diffusion in Silicon
O. Sugino, Atsushi Oshiyama |
p75 |
