D- Centers in High Magnetic Fields and Quantum Wells
J. Zhu, S.G. Louie, T. Pang |
p1 |
|
Electronic States of Thermal Donors in Semiconductors
C.A.J. Ammerlaan, T. Gregorkiewicz |
p9 |
|
Impurity Control in Silicon Crystals for G-Bit Scale Integration
Toshihiko Abe |
p17 |
|
Optical Spectroscopy of Shallow Impurity States in Semiconductor Quantum Wells
Bo Monemar, P.O. Holtz, C.I. Harris, Peder Bergman, H. Kalt, M. Sundaram, J.L. Merz, A.C. Gossard, K. Köhler, T. Schweizer |
p29 |
|
Extremely Heavy Doping of Carbon in GaAs and InGaAs
Makoto Konagai |
p37 |
|
Carbon and Silicon Impurity Centers in GaAs
R.C. Newman |
p45 |
|
Non-Equilibrium Point Defects and Diffusion in GaAs and Related Compounds
U.M. Gösele, T.Y. Tan, M. Uematsu, K. Wada |
p53 |
|
Self-Compensation in P, As, and N Doped ZnSe
D.J. Chadi, N. Troullier |
p61 |
|
Vacancies in Semiconductors Characterized by Slow Positron and Their Effect on Electrical Properties
J.L. Lee |
p67 |
|
Effect of External Pressure and Internal Stress on Imyurity Diffusion in Silicon
O. Sugino, Atsushi Oshiyama |
p75 |
