| ISBN / ISBN-13: |
0-87849-628-9 / 978-0-87849-628-0 |
| Year: |
1992 |
| Title: |
Defects in Semiconductors 16
[online]
|
| Authors/Editors: |
Gordon Davies, G.G. DeLeo and M. Stavola |
| Published in: |
Materials Science Forum, Volumes 83 - 87 |
| Category: |
Proceedings of the 16th International Conference Defects in Semiconductors (ICDS-16), Lehigh University, USA, July 1991 |
| Pages: |
1634 |
| Edition: |
3-vol. set |
| Description: |
Part 1. 1. Hydrogen in Elemental Hosts . 2. Transition Metal Impurities in Elemental Hosts . 3. Impurities in Elemental Hosts . 4. Irradiation Defects in Elemental Hosts . 5. Oxygen in GaAs, Si and Ge . 6. Theory . Part 2 . 7. Hydrogen in Compound Semiconductors . 8. Rare Earth Impurities in Silicon and Compound Semiconductors . 9. Transition Metal Impurities in Compound Semiconductors . 10. Donors in Compound Semiconductors . 11. EL2 And Anti-Site Related Defects . 12. Other Defects in III-V Semiconductors . 13. Growth Defects . Part 3 . 14. New Techniques . 15. Defects in SiC and Diamond . 16. Defects in II-VI Semiconductors . 17. Hetero-Epitaxy and Strained Layers . 18. Dislocations . 19. Superlattices . 20. Defects at Surfaces and Interfaces and in Low-Dimensional Structures . 21. Processing-Induced Defects . 22. Effects of Defects on Devices .
|
| TOC: |
Table of Contents |
| Prices: |
USD: 598.00 / EUR: 433.00 |
